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| CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C227L3 Issued Date : 2004.03.17 Revised Date : Page No. : 1/4 BTN2222AL3 Description * Low collector output capacitance. * High current capability * Low leakage current * High cutoff frequency * Complementary to BTP2907AL3 Symbol BTN2222AL3 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @TC=25 Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 75 40 6 600 5 150 -55~+150 Unit V V V mA W C C BTN2222AL3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 hFE1 hFE2 hFE3 *hFE4 *hFE5 *hFE6 fT Cob Min. 75 40 6 35 50 75 100 50 40 300 Typ. Max. 10 10 100 0.3 1.0 1.2 2.0 300 8 Unit V V V nA nA nA V V V V MHz pF Spec. No. : C227L3 Issued Date : 2004.03.17 Revised Date : Page No. : 2/4 Test Conditions IC=10A IC=10mA IE=10A VCB=60V VCE=60V,VEB(off)=3V VEB=3V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0A, f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% BTN2222AL3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 VCE=10V Spec. No. : C227L3 Issued Date : 2004.03.17 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) VCE(SAT)@IC=10IB Current Gain---HFE 100 VCE=1V 100 10 0.1 1 10 100 1000 Collector Current---IC(mA) 10 0.1 1 10 100 Collector Current---IC(mA) 1000 Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) Saturation Voltage---(mV) VCE(SAT)@IC=38IB Saturation Voltage vs Collector Current 10000 VBE(SAT)@IC=10IB 100 1000 10 1 10 100 Collector Current---IC(mA) 1000 100 0.1 1 10 100 1000 Collector Current---IC(mA) Cutoff Frequency vs Collector Current 1000 VCE=20V Power Derating Curve 6 Power Dissipation---PD(W) 5 4 3 2 1 0 Cutoff Frequency---fT(MHz) 100 1 10 Collector Current---IC(mA) 100 0 50 100 150 200 Ambient Temperature---TC() BTN2222AL3 CYStek Product Specification CYStech Electronics Corp. SOT-223 Dimension A Spec. No. : C227L3 Issued Date : 2004.03.17 Revised Date : Page No. : 4/4 Marking: B 1 2 3 C 2222A D E F G H a1 I a2 Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical DIM A B C D E F Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 o *13 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 o *13 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN2222AL3 CYStek Product Specification |
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